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Several customers are currently engaged for this advanced RF SOI process, which is targeted for 5G millimeter-wave (mmWave) front-end module (FEM) applications, including smartphones and next-generation mmWave beamforming systems in future base stations.
As systems move to frequencies above 24GHz, higher performance RF silicon solutions are required to exploit the large available bandwidth in the mmWave spectrum.
GF’s 45RFSOI platform is optimized for beam forming FEMs, with features that improve RF performance through combining high-frequency transistors, high-resistivity silicon-on-insulator (SOI) substrates and ultra-thick copper wiring.
Moreover, the SOI technology enables easy integration of power amplifiers, switches, LNAs, phase shifters, up/down converters and VCO/PLLs that lowers cost, size and power compared to competing technologies targeting tomorrow’s multi-gigabit-per-second communication systems, including internet broadband satellite, smartphones and 5G infrastructure.
GF’s RF SOI solutions are part of the company’s vision to develop and deliver the next wave of 5G technology aimed at enabling connected intelligence for next-generation devices, networks and wired/wireless systems. GF has a successful track record in manufacturing RF SOI solutions at its 300mm production line in East Fishkill, N.Y. Customers can now start optimizing their chip designs to develop differentiated solutions for high performance in the RF front end for 5G and mmWave applications.
